1 SOLID-STATE GROWTH OF A CHEMICAL COMPOUND LAYER AT THE INTERFACE OF TWO ELEMENTARY SUBSTANCES |
1 |
1.1 Special features of description of the kinetics of solid-state heterogeneous reactions |
1 |
1.2. Reaction diffusion. | 4 |
1.3 Growth of the ApBq layer at the expense of diffusion of only component B | 6 |
1.3.1 Critical thickness of the ApBq layer with regard to component B | 11 |
1.3.2 Growth regime of the ApBq layer with regard to component B: Theoretical definition |
14 |
1.3.3. Stationary state or stationary point? | 15 |
1.4. Growth of the ApBq layer at the expense of diffusion of components A and B . | 17 |
1.4.1 Critical thickness and the growth regime of the ApBq layer with regard to component A | 19 |
1.4.2 General kinetic equation: a single compound layer | 20 |
1.4.3. Separate determination of the reaction-diffusion constants | 24 |
1.5. Linear growth of the Cu6Sn5 layer in the copper-tin reaction couple | 28 |
1.6. Parabolic growth of the AlSb layer in the aluminium-antimony diffusion couple | 31 |
1.7 Linear-parabolic growth of the chemical compound layer | 34 |
1.8. The ratio of diffusion coefficients of a component in growing and non-growing chemical compound layers | 37 |
1.9 Growth of the layer of a single compound: brief conclusions | 48 |
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2 GROWTH OF THE LAYERS OF TWO CHEMICAL COMPOUNDS BETWEEN ELEMENTARY SUBSTANCES | 50 |
2.1. Chemical reactions at phase interfaces | 51 |
2.2. A system of differential equations describing the formation rate of the layers of two chemical compounds | 53 |
2.3. Initial linear growth of the ApBq and ArBs layers | 59 |
2.4. Minimal thickness of the ArBs layer necessary for the ApBq layer to grow | 63 |
2.5 Non-linear growth of the ApBq and ArBs layers | 65 |
2.6 Effect of the critical thickness of the ApBq layer with regard to component A on the process of growth of the ArBs layer | 67 |
2.7 'Paralinear' stage of growth of two compound layers | 68 |
2.8 Diffusional stage of growth of the ApBq and ArBs layers | 74 |
2.9 Growth of the layers of two compounds: brief conclusions | 81 |
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3 GROWTH OF COMPOUND LAYERS IN A MULTIPHASE BINARY SYSTEM | 83 |
3.1. Chemical reactions at the phase interfaces of a multiphase binary systems | 85 |
3.2. A system of differential equations describing the growth process of layers of three chemical compounds between elementary substances A and B | 87 |
3.3 Initial linear growth of the layers | 91 |
3.4 Transition from linear to non-linear kinetics | 93 |
3.5 Critical values of the thickness of the layers and their effect on growth kinetics | 94 |
3.6 Diffusional stage of formation of the layers | 95 |
3.7 Sequence of formation of the layers of chemical compounds in the A-B reaction couple of a multiphase binary system | 97 |
3.8 Multiphase growth of compound layers: brief conclusions | 107 |
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4 THE EFFECT OF COMPOSITIONS OF INITIAL PHASES ON THE GROWTH RATE OF A CHEMICAL COMPOUND LAYER | 109 |
4.1 Growth of the ArBs layer at the A-B interface | 109 |
4.2 Growth of the ArBs layer at the ApBq -B interface | 111 |
4.2.1 Growth of the ArBs layer between ApBq and B at the expense of diffusion of only component A | 111 |
4.2.2 Growth of the ArBs layer between ApBq and B at the expense of diffusion of both components | 115 |
4.3 Growth of the ArBs layer at the ApBq - AlBn interface | 117 |
4.4 Comparison of the growth rates of the ArBs layer in different reaction couples of the A-B multiphase system | 119 |
4.5 Duplex structure of the ArBs layer | 129 |
4.6 The effect of compositions of initial phases on the growth rate of a chemical compound layer: brief conclusions | 133 |
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5 THE EFFECT OF DISSOLUTION (EVAPORATION) ON THE GROWTH RATE OF A CHEMICAL COMPOUND LAYER | 135 |
5.1 Main relationships governing dissolution of a solid in a liquid | 135 |
5.2 Experimental investigation of the process of dissolution of a solid in a liquid | 139 |
5.2.1 Determination of saturation concentration | 141 |
5.2.2 Determination of the dissolution rate constant | 142 |
5.2.3 Determination of diffusion coefficients | 146 |
5.3 Growth kinetics of the layer of a chemical compound under the conditions of its simultaneous dissolution in the liquid phase | 147 |
5.4 Growth kinetics of intermetallic layers at the transition metal-liquid aluminium interface | 157 |
5.5 Special features of kinetic dependences in the solid-gas system | 162 |
5.5.1 Influence of evaporation on the growth of a chemical compound layer | 164 |
5.5.2 Oxidation of chemical compounds | 167 |
5.6 The effect of dissolution (evaporation) on the growth rate of a chemical compound layer: brief conclusions | 170 |
FINAL REMARKS | 172 |
REFERENCES | 175 |
INDEX | 189 |