Hard Si-C-N chemical vapor deposited films

   
С.Н.Дуб,
 
А.Погребняк
 

Інститут проблем матеріалознавства ім. І. М. Францевича НАН України , вул. Омеляна Пріцака, 3, Київ, 03142, Україна
Proceedings of the International Conference “Nanomaterials: Applications and Properties”, Lviv, Ukraine, September 16-23, 2015, 2015, Т.4, #1
http://www.materials.kiev.ua/article/1650

Анотація

Nb-Al-N films were deposited by magnetron sputtering of the Nb and Al targets in the Ar-N2 atmosphere on silicon wafers at various currents supplied to the magnetron device with the Al target (IAl=100, 150, 200, 300 mA). The films were studied with XRD, FTIR spectroscopy, as well by nanoindentation and Knoop indentation tests. The films were found to have the nanocomposite nc-B1-NbNx/a-AlN structure and exhibit the nanohardness and Knoop hardness in the ranges of 29-33.5 GPa and 46-48 GPa, respectively. The hardness and elastic modulus has an extreme dependence on IAl


ALN ПЛІВКИ, NB-AL-N ПЛІВКИ, МАГНЕТРОННЕ РОЗПИЛЕННЯ, МЕХАНІЧНІ ВЛАСТИВОСТІ, НАНОІНДЕНТУВАННЯ, СТРУКТУРА ПЛІВКИ