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Structure and Properties of NbN and Nb-Si-N Deposited by Magnetron Sputtering

В.І.Іващенко,
 
П.Л.Скринський,
 
О.Литвин,
 
В.Н.Рогоз,
 
O.В.Соболь,
 
А.П.Кузьменко
 

Інститут проблем матеріалознавства ім. І. М. Францевича НАН України , вул. Омеляна Пріцака, 3, Київ, 03142, Україна
Proceedings of the International Conference “Nanomaterials: Applications and Properties”, Lviv, Ukraine, September 21-23, 2014, 2014, Т.3, #1
http://www.materials.kiev.ua/article/1646

Анотація

NbN and Nb-Si-N films were deposited by magnetron sputtering the Nb and Si targets on silicon wafers at various bias voltage, Us. The films were investigated by an atomic force microscope (AFM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and nanoindentation. The deposited films were annealed to establish their thermal stability. The NbN films were nanostructured, and the Nb-Si-N films had a nanocomposite structure, and represented an aggregation of δ-NbNx nanocrystallites embedded into the amorphous Si3N4 tissue (nc-δ-NbNx / a-Si3N4).


AFM, NB-SI-N, NBN, XPS, XRD

Публікації